Titre : |
Scanning tunneling microscopy |
Type de document : |
texte imprimé |
Auteurs : |
Neddermeyer, H, Éditeur scientifique |
Editeur : |
Boston : Kluwer academic publishers |
Année de publication : |
1993 |
Collection : |
Perspectives in condensed matter physics num. 6 |
Importance : |
XI-266 p. |
Présentation : |
ill. |
Format : |
24 cm |
ISBN/ISSN/EAN : |
978-0-7923-2065-4 |
Note générale : |
Bibliogr. Index |
Langues : |
Anglais (eng) |
Mots-clés : |
Scanning tunneling microscopy
Microscopie tunnel à balayage |
Index. décimale : |
535.33 Spectres en général. Spectres d'émission. |
Résumé : |
Devoted to the growing field of scanning tunnelling microscopy and spectroscopy, the papers collected in this volume cover the theory of STM, instrumental problems and important applications in the physics of clean and metal-covered semiconductors, clean metal, alloy and other compound surfaces. |
Note de contenu : |
Contents:
* Tunneling spectroscopy and inverse photoemission: image and field states.
* Surface electronic structure of Si(111)-(7x &) resolved in real space.
* Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces.
* Atomic-resolution imaging of close-packed metal surfaces by scanning tunneling microscopy.
* Determination of atom positions at stacking-fault dislocations on Au(111) by scanning tunneling microscopy.
* Scanning tunneling microscopy of Si(001).
* Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy.
* Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling microscopy. |
Scanning tunneling microscopy [texte imprimé] / Neddermeyer, H, Éditeur scientifique . - Boston : Kluwer academic publishers, 1993 . - XI-266 p. : ill. ; 24 cm. - ( Perspectives in condensed matter physics; 6) . ISBN : 978-0-7923-2065-4 Bibliogr. Index Langues : Anglais ( eng)
Mots-clés : |
Scanning tunneling microscopy
Microscopie tunnel à balayage |
Index. décimale : |
535.33 Spectres en général. Spectres d'émission. |
Résumé : |
Devoted to the growing field of scanning tunnelling microscopy and spectroscopy, the papers collected in this volume cover the theory of STM, instrumental problems and important applications in the physics of clean and metal-covered semiconductors, clean metal, alloy and other compound surfaces. |
Note de contenu : |
Contents:
* Tunneling spectroscopy and inverse photoemission: image and field states.
* Surface electronic structure of Si(111)-(7x &) resolved in real space.
* Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces.
* Atomic-resolution imaging of close-packed metal surfaces by scanning tunneling microscopy.
* Determination of atom positions at stacking-fault dislocations on Au(111) by scanning tunneling microscopy.
* Scanning tunneling microscopy of Si(001).
* Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy.
* Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling microscopy. |
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