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Scanning tunneling microscopy

Public ISBD Titre : Scanning tunneling microscopy Type de document : texte imprimé Auteurs : Neddermeyer, H, Editeur scientifique Editeur : Boston : Kluwer academic publishers Année de publication : 1993 Collection : Perspectives in condensed matter physics num. 6 Importance : XI-266 p. Présentation : ill. Format : 24 cm ISBN/ISSN/EAN : 978-0-7923-2065-4 Note générale : Bibliogr. Index Langues : Anglais (eng) Mots-clés : Scanning  tunneling  microscopy Microscopie  tunnel  à  balayage Index. décimale : 535.33 Spectres en général. Spectres d'émission. Résumé : Devoted to the growing field of scanning tunnelling microscopy and spectroscopy, the papers collected in this volume cover the theory of STM, instrumental problems and important applications in the physics of clean and metal-covered semiconductors, clean metal, alloy and other compound surfaces. Note de contenu : Contents: * Tunneling spectroscopy and inverse photoemission: image and field states. * Surface electronic structure of Si(111)-(7x &) resolved in real space. * Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces. * Atomic-resolution imaging of close-packed metal surfaces by scanning tunneling microscopy. * Determination of atom positions at stacking-fault dislocations on Au(111) by scanning tunneling microscopy. * Scanning tunneling microscopy of Si(001). * Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy. * Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling microscopy. Scanning tunneling microscopy [texte imprimé] / Neddermeyer, H, Editeur scientifique . - Kluwer academic publishers, 1993 . - XI-266 p. : ill. ; 24 cm. - (Perspectives in condensed matter physics; 6) . ISBN : 978-0-7923-2065-4 Bibliogr. Index Langues : Anglais (eng) Mots-clés : Scanning  tunneling  microscopy Microscopie  tunnel  à  balayage Index. décimale : 535.33 Spectres en général. Spectres d'émission. Résumé : Devoted to the growing field of scanning tunnelling microscopy and spectroscopy, the papers collected in this volume cover the theory of STM, instrumental problems and important applications in the physics of clean and metal-covered semiconductors, clean metal, alloy and other compound surfaces. Note de contenu : Contents: * Tunneling spectroscopy and inverse photoemission: image and field states. * Surface electronic structure of Si(111)-(7x &) resolved in real space. * Voltage-dependent scanning tunneling microscopy imaging of semiconductor surfaces. * Atomic-resolution imaging of close-packed metal surfaces by scanning tunneling microscopy. * Determination of atom positions at stacking-fault dislocations on Au(111) by scanning tunneling microscopy. * Scanning tunneling microscopy of Si(001). * Electronic structure of localized Si dangling-bond defects by tunneling spectroscopy. * Fermi-level pinning at the Sb/GaAs(110) surface studied by scanning tunneling microscopy.

Exemplaires

Code-barres	Cote	Support	Localisation	Section	Disponibilité	Etat_Exemplaire
041544	535.33 SCA	Papier	Bibliothèque Centrale	Physique	Disponible