| Titre : | Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction |
| Auteurs : | Jianjun Gao, Auteur |
| Type de document : | texte imprimé |
| Editeur : | Higher Education Press, 2015 |
| Autre Editeur : | New York : John Wiley & Sons |
| ISBN/ISSN/EAN : | 978-1-118-92152-4 |
| Format : | XVI, 259 p. / ill. / 25 cm. |
| Note générale : | Index |
| Langues : | Anglais |
| Index. décimale : | 621.382.33 (Transistors bipolaires (utilisant tous les deux les types de porteur de charge avec l'injection du porteur) ) |
| Tags : | Bipolar transistors Heterojunctions Electronic circuit design Microwave measurements |
| Résumé : |
This book provides a highly comprehensive summary on circuit–related modeling techniques and parameter extraction methods for heterojunction bipolar transistors (HBT), one of the most important devices for microwave applications. Appropriate for electrical engineering and computer science studies, the book starts with an introduction of signal and noise parameters of two–port networks and then covers the basic operation mechanisms and modeling techniques of bipolar junction transistor and HBT. An overview on modeling techniques and parameter extraction methods for HBTs focusing on circuit simulation and design A valuable reference to the basic modeling issues and specific semiconductor device models encountered in circuit simulators Details the accurate device modeling for HBTs and high–level IC design using HBTs Presents electrical/RF engineering related theory and tools and includes equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods. Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction is an outstanding reference book for engineers and technicians working in the areas of RF, microwave and solid–state device and IC design, and it is also of great interest to graduate/undergraduate students studying microwave active devices and circuits design. |
| Note de contenu : |
Summary :
1. Basic concept of microwave device modeling 2. Modeling and parameter extraction methods of bipolar junction transistor 3. Basic principle of HBT 4. Small-signal modeling and parameter extraction of HBT 5. Large-signal equivalent circuit modeling of HBT ... |
Exemplaires (2)
| Cote | Support | Localisation | Section | Disponibilité | Etat_Exemplaire |
|---|---|---|---|---|---|
| 621.382.33 GAO | Papier | Bibliothèque Centrale | Electronique | Disponible | Consultation sur place |
| 621.382.33 GAO | Papier | Bibliothèque Centrale | Electronique | Disponible | En bon état |
