| Titre : | SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors |
| Auteurs : | Yasuhisa Omura, Auteur |
| Type de document : | texte imprimé |
| Editeur : | New York : John Wiley & Sons, 2013 |
| Autre Editeur : | Piscataway, NJ : IEEE Press |
| ISBN/ISSN/EAN : | 978-1-118-48790-7 |
| Format : | XVIII, 299 p. / ill. / 25 cm. |
| Note générale : |
SOI = Silicon-On-Insulator
Bibliogr. - Index |
| Langues : | Anglais |
| Index. décimale : | 621.382.33 (Transistors bipolaires (utilisant tous les deux les types de porteur de charge avec l'injection du porteur) ) |
| Tags : | Insulated gate bipolar transistors Silicon-on-insulator technology |
| Résumé : |
The lubistor (lateral, unidirectional, bipolar - type insulated - gate transistor) is a transistor - like device invented by the author in 1982. The main application of the device is as an electrostatic discharge protection device in SOI (Silicon-On-Insulator) circuits used in IBM and AMD microprocessors. SOI structures are believed to have excellent potential in high-temperature electronics. No comprehensive description of the physics and possible applications of the lubistor can be found in a single sourcr even though the lubistor is already being uded in SOI LSI. The books provides, for the first time, a comprehensive understanding of the physics of the lubistor. |
| Note de contenu : |
Summary :
1. Brief review and modern applications of BN-junction devices 2. Physics and modeling of soi lubistors- thick - film devices 3. Physics and modeling of soi libistors - thin - film devices 4. Circuit applications 5. Optical device applications of lubistors ... |
Exemplaires (2)
| Cote | Support | Localisation | Section | Disponibilité | Etat_Exemplaire |
|---|---|---|---|---|---|
| 621.382.33 OMU | Papier | Bibliothèque Centrale | Electronique | Disponible | Consultation sur place |
| 621.382.33 OMU | Papier | Bibliothèque Centrale | Electronique | Disponible | En bon état |
