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Heterojunction bipolar transistors for circuit design / Jianjun Gao

Public ISBD Titre : Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction Type de document : texte imprimé Auteurs : Jianjun Gao, Auteur Editeur : Higher Education Press Année de publication : 2015 Autre Editeur : New York : Wiley Importance : XVI, 259 p. Présentation : ill. Format : 25 cm. ISBN/ISSN/EAN : 978-1-11-892152-4 Note générale : Index Langues : Anglais (eng) Mots-clés : Bipolar  transistors Heterojunctions Electronic  circuit  design Microwave  measurements Index. décimale : 621.382.33 Transistors bipolaires (utilisant tous les deux les types de porteur de charge avec l'injection du porteur) Résumé : This book provides a highly comprehensive summary on circuit–related modeling techniques and parameter extraction methods for heterojunction bipolar transistors (HBT), one of the most important devices for microwave applications. Appropriate for electrical engineering and computer science studies, the book starts with an introduction of signal and noise parameters of two–port networks and then covers the basic operation mechanisms and modeling techniques of bipolar junction transistor and HBT. An overview on modeling techniques and parameter extraction methods for HBTs focusing on circuit simulation and design A valuable reference to the basic modeling issues and specific semiconductor device models encountered in circuit simulators Details the accurate device modeling for HBTs and high–level IC design using HBTs Presents electrical/RF engineering related theory and tools and includes equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods. Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction is an outstanding reference book for engineers and technicians working in the areas of RF, microwave and solid–state device and IC design, and it is also of great interest to graduate/undergraduate students studying microwave active devices and circuits design. Note de contenu : Summary : 1. Basic concept of microwave device modeling 2. Modeling and parameter extraction methods of bipolar junction transistor 3. Basic principle of HBT 4. Small-signal modeling and parameter extraction of HBT 5. Large-signal equivalent circuit modeling of HBT ... Heterojunction bipolar transistors for circuit design : microwave modelling and parameter extraction [texte imprimé] / Jianjun Gao, Auteur . - [S.l.] : Higher Education Press : New York : Wiley, 2015 . - XVI, 259 p. : ill. ; 25 cm. ISBN : 978-1-11-892152-4 Index Langues : Anglais (eng) Mots-clés : Bipolar  transistors Heterojunctions Electronic  circuit  design Microwave  measurements Index. décimale : 621.382.33 Transistors bipolaires (utilisant tous les deux les types de porteur de charge avec l'injection du porteur) Résumé : This book provides a highly comprehensive summary on circuit–related modeling techniques and parameter extraction methods for heterojunction bipolar transistors (HBT), one of the most important devices for microwave applications. Appropriate for electrical engineering and computer science studies, the book starts with an introduction of signal and noise parameters of two–port networks and then covers the basic operation mechanisms and modeling techniques of bipolar junction transistor and HBT. An overview on modeling techniques and parameter extraction methods for HBTs focusing on circuit simulation and design A valuable reference to the basic modeling issues and specific semiconductor device models encountered in circuit simulators Details the accurate device modeling for HBTs and high–level IC design using HBTs Presents electrical/RF engineering related theory and tools and includes equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods. Heterojunction Bipolar Transistors for Circuit Design: Microwave Modeling and Parameter Extraction is an outstanding reference book for engineers and technicians working in the areas of RF, microwave and solid–state device and IC design, and it is also of great interest to graduate/undergraduate students studying microwave active devices and circuits design. Note de contenu : Summary : 1. Basic concept of microwave device modeling 2. Modeling and parameter extraction methods of bipolar junction transistor 3. Basic principle of HBT 4. Small-signal modeling and parameter extraction of HBT 5. Large-signal equivalent circuit modeling of HBT ...

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Code-barres	Cote	Support	Localisation	Section	Disponibilité	Etat_Exemplaire
055802	621.382.33 GAO	Papier	Bibliothèque Centrale	Electronique	Disponible	Consultation sur place
055803	621.382.33 GAO	Papier	Bibliothèque Centrale	Electronique	Disponible	En bon état