| Titre : | Gallium arsenide digital circuits |
| Auteurs : | Omar Wing, Auteur |
| Type de document : | texte imprimé |
| Editeur : | Boston : Kluwer academic publishers, 1990 |
| Collection : | The kluwer international series in engineering and computer science |
| Sous-collection : | VLSI, computer architecture and digital signal processing, num. 109 |
| ISBN/ISSN/EAN : | 978-0-7923-9081-7 |
| Format : | XII-188 p. / ill. / 24 cm |
| Note générale : | Bibliogr. p. 178-184. Index |
| Langues : | Anglais |
| Index. décimale : | 621.382 (Dispositifs électroniques utilisant les effets des corps solides. Dispositifs semi-conducteurs ) |
| Tags : | Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Gallium arsenide semiconductors Digital integrated circuits -- Design and construction -- Data processing |
| Résumé : | Gallium arsenide digital circuits deals with the modeling, analysis and design of GaAs digital circuits. It begins with the derivation of a physics based model of the GaAs MESFET from which the current-voltage and charge-voltage relations are deduced. From these relations, a quasistatic model suitable for circuit simulation is obtained. |
| Note de contenu : |
Contents:
* Introduction. * Circuit Models of the MESFET. * Enhancement-Depletion Logic Circuits. * Allowable range of VG. * Buffered ED Logic Circuits. * Source-Coupled Logic Circuits. * Subsystems Design. |
Exemplaires (1)
| Cote | Support | Localisation | Section | Disponibilité | Etat_Exemplaire |
|---|---|---|---|---|---|
| 621.382 WIN | Papier | Bibliothèque Centrale | Electronique | Disponible | En bon état |
