Titre :	Gallium arsenide digital circuits
Type de document :	texte imprimé
Auteurs :	Omar Wing, Auteur
Editeur :	Boston : Kluwer academic publishers
Année de publication :	1990
Collection :	The kluwer international series in engineering and computer science
Sous-collection :	VLSI, computer architecture and digital signal processing num. 109
Importance :	XII-188 p.
Présentation :	ill.
Format :	24 cm
ISBN/ISSN/EAN :	978-0-7923-9081-7
Note générale :	Bibliogr. p. 178-184. Index
Langues :	Anglais (eng)
Mots-clés :	Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Gallium arsenide semiconductors Digital integrated circuits -- Design and construction -- Data processing
Index. décimale :	621.382 Dispositifs électroniques utilisant les effets des corps solides. Dispositifs semi-conducteurs
Résumé :	Gallium arsenide digital circuits deals with the modeling, analysis and design of GaAs digital circuits. It begins with the derivation of a physics based model of the GaAs MESFET from which the current-voltage and charge-voltage relations are deduced. From these relations, a quasistatic model suitable for circuit simulation is obtained.
Note de contenu :	Contents: * Introduction. * Circuit Models of the MESFET. * Enhancement-Depletion Logic Circuits. * Allowable range of VG. * Buffered ED Logic Circuits. * Source-Coupled Logic Circuits. * Subsystems Design.

Gallium arsenide digital circuits [texte imprimé] / Omar Wing, Auteur . - Boston : Kluwer academic publishers, 1990 . - XII-188 p. : ill. ; 24 cm. - (The kluwer international series in engineering and computer science. VLSI, computer architecture and digital signal processing; 109) .
ISBN : 978-0-7923-9081-7
Bibliogr. p. 178-184. Index
Langues : Anglais (eng)

Mots-clés :	Metal semiconductor field-effect transistors Modulation-doped field-effect transistors Gallium arsenide semiconductors Digital integrated circuits -- Design and construction -- Data processing
Index. décimale :	621.382 Dispositifs électroniques utilisant les effets des corps solides. Dispositifs semi-conducteurs
Résumé :	Gallium arsenide digital circuits deals with the modeling, analysis and design of GaAs digital circuits. It begins with the derivation of a physics based model of the GaAs MESFET from which the current-voltage and charge-voltage relations are deduced. From these relations, a quasistatic model suitable for circuit simulation is obtained.
Note de contenu :	Contents: * Introduction. * Circuit Models of the MESFET. * Enhancement-Depletion Logic Circuits. * Allowable range of VG. * Buffered ED Logic Circuits. * Source-Coupled Logic Circuits. * Subsystems Design.