| Titre : |
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors |
| Type de document : |
texte imprimé |
| Auteurs : |
Yasuhisa Omura, Auteur |
| Editeur : |
New York : John Wiley & Sons |
| Année de publication : |
2013 |
| Autre Editeur : |
Piscataway, NJ : IEEE Press |
| Importance : |
XVIII, 299 p. |
| Présentation : |
ill. |
| Format : |
25 cm. |
| ISBN/ISSN/EAN : |
978-1-118-48790-7 |
| Note générale : |
SOI = Silicon-On-Insulator
Bibliogr. - Index |
| Langues : |
Anglais (eng) |
| Mots-clés : |
Insulated gate bipolar transistors
Silicon-on-insulator technology |
| Index. décimale : |
621.382.33 Transistors bipolaires (utilisant tous les deux les types de porteur de charge avec l'injection du porteur) |
| Résumé : |
The lubistor (lateral, unidirectional, bipolar - type insulated - gate transistor) is a transistor - like device invented by the author in 1982. The main application of the device is as an electrostatic discharge protection device in SOI (Silicon-On-Insulator) circuits used in IBM and AMD microprocessors. SOI structures are believed to have excellent potential in high-temperature electronics. No comprehensive description of the physics and possible applications of the lubistor can be found in a single sourcr even though the lubistor is already being uded in SOI LSI. The books provides, for the first time, a comprehensive understanding of the physics of the lubistor. |
| Note de contenu : |
Summary :
1. Brief review and modern applications of BN-junction devices
2. Physics and modeling of soi lubistors- thick - film devices
3. Physics and modeling of soi libistors - thin - film devices
4. Circuit applications
5. Optical device applications of lubistors
... |
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors [texte imprimé] / Yasuhisa Omura, Auteur . - New York : John Wiley & Sons : Piscataway, NJ : IEEE Press, 2013 . - XVIII, 299 p. : ill. ; 25 cm. ISBN : 978-1-118-48790-7 SOI = Silicon-On-Insulator
Bibliogr. - Index Langues : Anglais ( eng)
| Mots-clés : |
Insulated gate bipolar transistors
Silicon-on-insulator technology |
| Index. décimale : |
621.382.33 Transistors bipolaires (utilisant tous les deux les types de porteur de charge avec l'injection du porteur) |
| Résumé : |
The lubistor (lateral, unidirectional, bipolar - type insulated - gate transistor) is a transistor - like device invented by the author in 1982. The main application of the device is as an electrostatic discharge protection device in SOI (Silicon-On-Insulator) circuits used in IBM and AMD microprocessors. SOI structures are believed to have excellent potential in high-temperature electronics. No comprehensive description of the physics and possible applications of the lubistor can be found in a single sourcr even though the lubistor is already being uded in SOI LSI. The books provides, for the first time, a comprehensive understanding of the physics of the lubistor. |
| Note de contenu : |
Summary :
1. Brief review and modern applications of BN-junction devices
2. Physics and modeling of soi lubistors- thick - film devices
3. Physics and modeling of soi libistors - thin - film devices
4. Circuit applications
5. Optical device applications of lubistors
... |
|  |
621 Ingenierie mecanique en general. Technologie nucleaire. Ingenierie electrique. Machinerie
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