| Titre : |
Monte carlo device simulation : full band and beyond |
| Type de document : |
texte imprimé |
| Auteurs : |
Karl Hess, Éditeur scientifique |
| Editeur : |
Boston : Kluwer academic publishers |
| Année de publication : |
1991 |
| Collection : |
The kluwer international series in engineering and computer science |
| Sous-collection : |
VLSI, computer architecture and digital signal processing num. 144 |
| Importance : |
X-310 p. |
| Présentation : |
ill. |
| Format : |
24 cm |
| ISBN/ISSN/EAN : |
978-0-7923-9172-2 |
| Note générale : |
Bibliogr. p. 284. Index |
| Langues : |
Anglais (eng) |
| Mots-clés : |
Semiconductors -- Mathematical models
Monte carlo method
Semiconductors-computer simulation |
| Index. décimale : |
621.38 Dispositifs électroniques. Tubes à électrons. photocellules. Accélérateur de particules. Tubes à rayons X |
| Résumé : |
Monte carlo simulation is now a well established method for studying semiconductor devices and is a particularly well suited to highlighting physical mechanisms and exploring material properties. The more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method.
It is now becoming increasingly clear that phenomena such as reliability related hot-electron effects in MOSFETs cannot be understood statisfactorily without using full band monte carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of monte carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the disant future. |
| Note de contenu : |
Contents:
1. Numerical Aspects and Implementation of the DAMOCLES Monte Carlo Device Simulation Program.
2. Scattering Mechanisms for Semiconductor Transport Calculations.
3. Evaluating Photoexcitation Experiments Using Monte Carlo Simulations.
4. Extensions of the Monte Carlo Simulation in Semiconductors to Fast Processes.
5. Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors.
6. Ensemble Monte Carlo Investigation of Nonlinear Transport Effects in Semiconductor Heterostructure Devices.
7. Monte Carlo Simulation of Quasi-One-Dimensional Systems.- 8. The Application of Monte Carlo Techniques in Advanced Hydrodynamic Transport Models.
9. Vectorization of Monte Carlo Algorithms for Semiconductor Simulation.
10. Full Band Monte Carlo Program for Electrons in Silicon. |
Monte carlo device simulation : full band and beyond [texte imprimé] / Karl Hess, Éditeur scientifique . - Boston : Kluwer academic publishers, 1991 . - X-310 p. : ill. ; 24 cm. - ( The kluwer international series in engineering and computer science. VLSI, computer architecture and digital signal processing; 144) . ISBN : 978-0-7923-9172-2 Bibliogr. p. 284. Index Langues : Anglais ( eng)
| Mots-clés : |
Semiconductors -- Mathematical models
Monte carlo method
Semiconductors-computer simulation |
| Index. décimale : |
621.38 Dispositifs électroniques. Tubes à électrons. photocellules. Accélérateur de particules. Tubes à rayons X |
| Résumé : |
Monte carlo simulation is now a well established method for studying semiconductor devices and is a particularly well suited to highlighting physical mechanisms and exploring material properties. The more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method.
It is now becoming increasingly clear that phenomena such as reliability related hot-electron effects in MOSFETs cannot be understood statisfactorily without using full band monte carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of monte carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the disant future. |
| Note de contenu : |
Contents:
1. Numerical Aspects and Implementation of the DAMOCLES Monte Carlo Device Simulation Program.
2. Scattering Mechanisms for Semiconductor Transport Calculations.
3. Evaluating Photoexcitation Experiments Using Monte Carlo Simulations.
4. Extensions of the Monte Carlo Simulation in Semiconductors to Fast Processes.
5. Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors.
6. Ensemble Monte Carlo Investigation of Nonlinear Transport Effects in Semiconductor Heterostructure Devices.
7. Monte Carlo Simulation of Quasi-One-Dimensional Systems.- 8. The Application of Monte Carlo Techniques in Advanced Hydrodynamic Transport Models.
9. Vectorization of Monte Carlo Algorithms for Semiconductor Simulation.
10. Full Band Monte Carlo Program for Electrons in Silicon. |
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Monte carlo device simulation (1991)
