| Titre : | Semiconductor surfaces and interfaces |
| Auteurs : | Winfried Monch, Auteur |
| Type de document : | texte imprimé |
| Mention d'édition : | 3 éd |
| Editeur : | Berlin ; London ; New York : Springer, 2001 |
| Collection : | Springer series in surface sciences, ISSN 0931-5195, num. 26 |
| ISBN/ISSN/EAN : | 978-3-540-67902-8 |
| Format : | XVI-548 p. / ill. / 24 cm |
| Note générale : | Bibliogr. Index |
| Langues : | Anglais |
| Index. décimale : | 621.382 (Dispositifs électroniques utilisant les effets des corps solides. Dispositifs semi-conducteurs ) |
| Tags : | Chimie des surfaces Semiconducteurs -- Jonctions Semiconducteurs -- Surfaces |
| Résumé : | The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states. |
| Note de contenu : |
* sommaire
- Surface Space-Charge Region in Thermal Equilibrium - Surface States - Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium - Surface Space-Charge Region in Non-Equilibrium - Interface States - Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors - {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure - {100} Surfaces of Silicon, Germanium, and Cubic Silicon Carbide - Diamond, Silicon, and Germanium {111}-2 x 1 Surfaces ... |
Exemplaires (1)
| Cote | Support | Localisation | Section | Disponibilité | Etat_Exemplaire |
|---|---|---|---|---|---|
| 621.382 MON | Papier | Bibliothèque Centrale | Electronique | Disponible |
