Metal impurities in silicon-device fabrication / Klaus Graff (1999)

Public ISBD Titre : Metal impurities in silicon-device fabrication Type de document : texte imprimé Auteurs : Klaus Graff, Auteur Mention d'édition : 2nd. ed Editeur : Berlin ; London ; Cham : Springer Année de publication : 1999 Collection : Springer series in Materials science num. 24 Importance : 268 p. ISBN/ISSN/EAN : 978-3-540-64213-8 Note générale : La couv. porte en plus: "With 47 figures" Mots-clés : Semiconductors -- Defects Silicon -- Inclusions Silicon -- Defects Index. décimale : 661.68 Sillicium et ses composés Résumé : Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables. Note de contenu : Au sommaire: - Common properties of transition metals. - Properties of transition metals in silicon. - Properties of the main impurities. - Properties of rare impurties. - Detection methods. ... Metal impurities in silicon-device fabrication [texte imprimé] / Klaus Graff, Auteur  . -  2nd. ed . - Berlin ; London ; Cham : Springer, 1999 . - 268 p.. - (Springer series in Materials science; 24) . ISBN : 978-3-540-64213-8 La couv. porte en plus: "With 47 figures" Mots-clés : Semiconductors -- Defects Silicon -- Inclusions Silicon -- Defects Index. décimale : 661.68 Sillicium et ses composés Résumé : Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables. Note de contenu : Au sommaire: - Common properties of transition metals. - Properties of transition metals in silicon. - Properties of the main impurities. - Properties of rare impurties. - Detection methods. ...

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Nitride semiconductors and devices / Hadis Morkoç (1999)

Public ISBD Titre : Nitride semiconductors and devices Type de document : texte imprimé Auteurs : Hadis Morkoç, Auteur Editeur : Berlin ; London ; Cham : Springer Année de publication : 1999 Collection : Springer series in Materials science num. 32 Importance : XXIV-488 p. Présentation : ill. Format : 24 cm ISBN/ISSN/EAN : 978-3-540-64038-7 Note générale : With 271 fig. and 23 tab. Bibliogr. p. 461-483 Langues : Anglais (eng) Mots-clés : Semiconductors -- Materials Nitrides Gallium nitride Semiconductor lasers Light emitting diodes Semiconducteurs Lasers à semiconducteurs Index. décimale : 621.382 Dispositifs électroniques utilisant les effets des corps solides. Dispositifs semi-conducteurs Résumé : Addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. This title treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, deposition and fabrication technologies, light-emitting diodes, and lasers. Note de contenu : - General Properties of Nitrides - Electronic Band Structure of Bulk and QW Nitrides - Growth of Nitride Semiconductors - Defects and Doping - Metal Contacts to GaN - Determination of Impurity and Carrier Concentrations - Carrier Transport - The p-n Junction - Optical Processes in Nitride Semiconductors - Light-Emitting Diodes - Semiconductor Lasers Nitride semiconductors and devices [texte imprimé] / Hadis Morkoç, Auteur . - Berlin ; London ; Cham : Springer, 1999 . - XXIV-488 p. : ill. ; 24 cm. - (Springer series in Materials science; 32) . ISBN : 978-3-540-64038-7 With 271 fig. and 23 tab. Bibliogr. p. 461-483 Langues : Anglais (eng) Mots-clés : Semiconductors -- Materials Nitrides Gallium nitride Semiconductor lasers Light emitting diodes Semiconducteurs Lasers à semiconducteurs Index. décimale : 621.382 Dispositifs électroniques utilisant les effets des corps solides. Dispositifs semi-conducteurs Résumé : Addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. This title treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, deposition and fabrication technologies, light-emitting diodes, and lasers. Note de contenu : - General Properties of Nitrides - Electronic Band Structure of Bulk and QW Nitrides - Growth of Nitride Semiconductors - Defects and Doping - Metal Contacts to GaN - Determination of Impurity and Carrier Concentrations - Carrier Transport - The p-n Junction - Optical Processes in Nitride Semiconductors - Light-Emitting Diodes - Semiconductor Lasers

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