| Titre : |
Microwave semiconductor devices |
| Type de document : |
texte imprimé |
| Auteurs : |
K. Sigfrid Yngvesson, Auteur |
| Editeur : |
Boston : Kluwer academic publishers |
| Année de publication : |
1991 |
| Collection : |
The kluwer international series in engineering and computer science |
| Sous-collection : |
VLSI, computer architecture and digital signal processing num. 134 |
| Importance : |
XV-471 p. |
| Présentation : |
ill. |
| Format : |
24 cm |
| ISBN/ISSN/EAN : |
978-0-7923-9156-2 |
| Note générale : |
Bibliogr. chaque fin de chapitre. Index |
| Langues : |
Anglais (eng) |
| Mots-clés : |
Semiconductors
Microwave devices
Semiconducteurs |
| Index. décimale : |
621.39 Télécommunications. Télégraphie. Téléphonie. Radiocommunication. Technologie et équipement vidéo. Télécontrôle. |
| Résumé : |
Microwave semiconductor devices presents complete up-to-date coverage of all semiconductor devices which are employed at microwave and millimeter wave frequancies (roughly 1 GHz through 300 GHz). Seven different different classes of devices are presented in the approximate order in which they ware developed, beginning with two-terminal GUNN, IMPATT, and tunneling devices as well as diodes used for detection, mixing, harmonic multiplication and switching. Major three terminal devices discussed are MESFETs, HFETs (also known as HEMTs or MODFETs), BJTs and HBTs. |
| Note de contenu : |
Contents:
* Review of semiconductor physics and devices.
* Transferred electron devices (TED).
* IMPATT (Impact Avalanche Transit Time) devices.
* Tunneling devices.
* Basic properties and circuit aspects of oscillators and amplifiers based on two-terminal devices.
* Power-combining.
* Review of noise processes and noise concepts relevant to microwave semiconductor devices.
... |
Microwave semiconductor devices [texte imprimé] / K. Sigfrid Yngvesson, Auteur . - Boston : Kluwer academic publishers, 1991 . - XV-471 p. : ill. ; 24 cm. - ( The kluwer international series in engineering and computer science. VLSI, computer architecture and digital signal processing; 134) . ISBN : 978-0-7923-9156-2 Bibliogr. chaque fin de chapitre. Index Langues : Anglais ( eng)
| Mots-clés : |
Semiconductors
Microwave devices
Semiconducteurs |
| Index. décimale : |
621.39 Télécommunications. Télégraphie. Téléphonie. Radiocommunication. Technologie et équipement vidéo. Télécontrôle. |
| Résumé : |
Microwave semiconductor devices presents complete up-to-date coverage of all semiconductor devices which are employed at microwave and millimeter wave frequancies (roughly 1 GHz through 300 GHz). Seven different different classes of devices are presented in the approximate order in which they ware developed, beginning with two-terminal GUNN, IMPATT, and tunneling devices as well as diodes used for detection, mixing, harmonic multiplication and switching. Major three terminal devices discussed are MESFETs, HFETs (also known as HEMTs or MODFETs), BJTs and HBTs. |
| Note de contenu : |
Contents:
* Review of semiconductor physics and devices.
* Transferred electron devices (TED).
* IMPATT (Impact Avalanche Transit Time) devices.
* Tunneling devices.
* Basic properties and circuit aspects of oscillators and amplifiers based on two-terminal devices.
* Power-combining.
* Review of noise processes and noise concepts relevant to microwave semiconductor devices.
... |
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