Les Inscriptions à la Bibliothèque sont ouvertes en
ligne via le site: https://biblio.enp.edu.dz
Les Réinscriptions se font à :
• La Bibliothèque Annexe pour les étudiants en
2ème Année CPST
• La Bibliothèque Centrale pour les étudiants en Spécialités
A partir de cette page vous pouvez :
| Retourner au premier écran avec les recherches... |
Détail de l'auteur
Auteur Klaus Graff
Documents disponibles écrits par cet auteur
Faire une suggestion Affiner la rechercheMetal impurities in silicon-device fabrication / Klaus Graff
Titre : Metal impurities in silicon-device fabrication Type de document : texte imprimé Auteurs : Klaus Graff, Auteur Mention d'édition : 2nd. ed Editeur : Berlin : Springer-Verlag Année de publication : 1999 Collection : Springer series in Materials science num. 24 Importance : 268 p. ISBN/ISSN/EAN : 978-3-540-64213-8 Note générale : La couv. porte en plus: "With 47 figures" Mots-clés : Semiconductors -- Defects
Silicon -- Inclusions
Silicon -- DefectsIndex. décimale : 661.68 Sillicium et ses composés Résumé :
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.Note de contenu : Au sommaire:
- Common properties of transition metals.
- Properties of transition metals in silicon.
- Properties of the main impurities.
- Properties of rare impurties.
- Detection methods.
...Metal impurities in silicon-device fabrication [texte imprimé] / Klaus Graff, Auteur . - 2nd. ed . - Springer-Verlag, 1999 . - 268 p.. - (Springer series in Materials science; 24) .
ISBN : 978-3-540-64213-8
La couv. porte en plus: "With 47 figures"
Mots-clés : Semiconductors -- Defects
Silicon -- Inclusions
Silicon -- DefectsIndex. décimale : 661.68 Sillicium et ses composés Résumé :
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.Note de contenu : Au sommaire:
- Common properties of transition metals.
- Properties of transition metals in silicon.
- Properties of the main impurities.
- Properties of rare impurties.
- Detection methods.
...Exemplaires
Code-barres Cote Support Localisation Section Disponibilité Etat_Exemplaire 044989 661.68 GRA Papier Bibliothèque Centrale Génie Chimique Disponible En bon état 049798 661.68 GRA Papier Bibliothèque Centrale Génie Chimique Disponible En bon état
